ESS502I-V-IICFlush Ceramic Pressure Sensor Module
The ESS502I-V-IIC Flush Ceramic Pressure Sensor Module is crafted with a ceramic base plate and a flush diaphragm sensor cell (ESS502), operating on the piezoresistive principle. The Wheatstone bridge is screen printed on one side of the flush ceramic diaphragm, which is subsequently adhered to the sensor’s body. The bridge faces inward toward a cavity.
Signal conditioning electronics are directly integrated on the ceramic substrate, generating a 0.5…4.5 V ratiometric output (ESS502-V), a 4-20mA output (ESS502-I), or an I2C output (ESS502-IIC) that includes both pressure and temperature data.
| ESS502-I | ESS502-V | ESS502-IIC | |
|---|---|---|---|
| Power supply | 10-36V | 5V | 2.7-5.5V |
| Signal output | 4-20 mA | 0.5-4.5V | I2C |
Electronic calibration is conducted with the on-board ASIC, ensuring offset and span correction across temperature variations. Software for zero correction, compensating for offset shifts due to final customer assembly, is available upon request. This feature ensures precise measurements and long-term stability.
Owing to the exceptional chemical resistance of Al2O3 ceramic, the ESS502I-V-IIC Flush Ceramic Pressure Sensor Module is apt for use with almost all aggressive media.
Features & Benefits
- Range 0-5bar‐200bar (Flush Diaphragm)
- 0.5-4.5V | 4-20mA | I2C output available
- Excellent resistance to corrosion and abrasion
- Absolute measurement available
- Thermally compensated
- Extended customization & choice of measuring ranges
Applications
- Cooling equipment & A/C system
- Automotive and vehicle
- Industrial process control
- HVAC system
- Refrigeration equipment
- Air conditioning unit
ESS502I-V-IIC Technical Specification
| Model | ESS502-I | ESS502-V | ESS502-IIC |
|---|---|---|---|
| Excitation Voltage | 8-32V | 5V±10% DC | 3-5V |
| Output Signal | 4-20mA | 0.5-4.5V | I2C |
| Working current | <10mA | ||
| Working voltage | 5V±10% DC (optional: 8-32V DC) | ||
| Working temperature | -40℃~135℃ | ||
| Storage temperature | -40℃~135℃ | ||
| Output accuracy | ±1.0%Vcc@0-70℃，±3.0%Vcc@-40℃~135℃ | ||
| Non linearity | 0.25%FS Max | ||
| Hysteresis & repeatability | 0.25%FS Max | ||
| Response time | <10ms | ||
| Lifetime & reliability test | >5 million, 0bar -nominal pressure cycle; @2-5Hz @35℃ | ||
| Long term stability | <0.25%FSO @25℃ （No time to accumulate） | ||
| ESD | 8kv (in air); 4kv (gnd) | ||
| EMC | 100 V/m @20MHz~1GHz ISO 11452-2 | ||
Download
ESS502 Pressure Range & Overpressure
| Range (bar) | Thickness (mm) | Overpressure (bar) | Burst pressure (bar) |
|---|---|---|---|
| ESS502 Standard Type (Φ6.35mm) |
|||
| 0-5 | 6.30±0.05 | >20 | >40 |
| 0-10 | 6.35±0.05 | >30 | >50 |
| 0-16 | 6.35±0.05 | >48 | >80 |
| 0-20 | 6.45±0.05 | >60 | >100 |
| 0-25 | 6.45±0.05 | >75 | >125 |
| 0-35 | 6.53±0.05 | >100 | >150 |
| 0-50 | 6.65±0.05 | >150 | >250 |
| 0-70 | 6.65±0.05 | >200 | >300 |
| 0-100 | 6.78±0.05 | >250 | >400 |
| 0-200 | 6.95±0.05 | >400 | >600 |
| ESS502 Thin Type (Φ6.35mm) | |||
| 0-5 | 3.30±0.05 | >20 | >40 |
| 0-10 | 3.30±0.05 | >30 | >50 |
| 0-16 | 3.35±0.05 | >48 | >80 |
| 0-20 | 3.35±0.05 | >60 | >100 |
| 0-25 | 3.45±0.05 | >75 | >125 |
| 0-35 | 3.45±0.05 | >100 | >150 |
| 0-50 | 3.55±0.05 | >150 | >250 |
| 0-70 | 3.65±0.05 | >200 | >300 |
| 0-100 | 3.78±0.05 | >250 | >400 |
ESS 5 Series Key Features
| Technical Characteristics | |
|---|---|
| Parameter | Description |
| Sensor type | Monolithic, Flush diaphragm, Absolute (A), Gauge (R) or Sealed gauge (S) |
| Technology | Ceramic Piezoresistive |
| Diaphragm material | Ceramic Al2O3 96% (standard), 99.6% or sapphire (on request) |
| Weight | ≤ 8g (ceramic cell only) |
| Response time | ≤ 1ms |
| Supply voltage | 2...36Vdc |
| Offset | ‐ 0.1 ± 0.1 mv/v(Other nominal values available on request) |
| Current cons. | ≤ 3mA @ 10V |
| Operating | -40...+85℃ (-40 °F...+185 °F) |
| Storage temperature | -40...+125℃ (-40 °F...+257 °F) |
| Impedance | 11 ± 30%kΩ |
