EST3135 Air Conditioning Pressure Transducers | HAVC/VRF
EST3135 line is specially designed for VRF air-conditioning system. The product features low power, bidirectional over voltage protection, high overload capacity, great electrical strength and salt-spray resistance that can meet the special demands of VRF.
Features
- Pressure type: Gauge Pressure
- Range:0~50bar
- Accuracy: ±1.0%F.S, ±2.0%F.S
- Customized working temperature: -35℃~105℃
- Signal output: 0.5~2.5…4.5Vdc
- Power supply: 5±0.25Vdc
- Housing material: Brass
- Ingress Protection: IP65
- OEM: Available
Model | EST3110 | EST3110 B | EST3120 |
---|---|---|---|
Data Sheet | Download | Download | Download |
Range | 0~5bar…50bar | 0~5bar…50bar | 0~5bar…50bar |
Accuracy | ±1.0% | ±1.0%,±4.0% | ±0.25%,±0.5%,±1.0% |
Power Supply | 10~30Vdc | 12~30Vdc | 10~30Vdc,5Vdc |
Output | 4~20mA,0.5~4.5V | 4~20mA,0.5~4.5V | 4~20mA,0.5~4.5V |
Electrical Connection | Packard | M12X1/ GX12/16-7 | DIN43650, IP65; GX 16-7 |
Pressure Connection | G1/4, NPT1/4, 7/16-20UNF | G1/4, NPT1/4, 7/16-20UNF | M20 x 1.5, G1/4, G1/2, NPT1/4, 7/16-20UNF |
Ingression Protection | IP65 | IP45/ IP65 | IP45/ IP68 |
Model | EST3122 | EST3135 | EST3123 |
---|---|---|---|
Data Sheet | Download | Download | Download |
Range | 0~5bar…50bar | 0~5bar…50bar | 0~5bar…50bar |
Accuracy | ±0.5% | ±1.0%,±2.0% | ±0.5%,±1.0% |
Power Supply | 10~30Vdc,5Vdc | 5±0.25Vdc | 5Vdc |
Output | 4~20mA,0.5~4.5V | 0.5~2.5…4.5Vdc | 0.5~2.5…4.5Vdc |
Electrical Connection | Packard, DIN43650 | Packard | Packard |
Pressure Connection | 7/16-20UNF, 9/16-20UNF | Cooper Pipe Connection | 7/16-20UNF, 9/16-20UNF, M20 x 1.5, G1/4 |
Ingression Protection | IP65 | IP65 | IP65 |
Applications
VRF Air-conditioning system
Technology
Piezoresistive based transducers rely on the piezoresistive effect which occurs when the electrical resistance of a material changes in response to applied mechanical strain. In metals, this effect is realized when the change in geometry with applied mechanical strain results in a small increase or decrease in the resistance of the metal. The piezoresistive effect in silicon is due primarily to changes at the atomic level and is approximately two orders of magnitude larger than in metals.
Sputter deposited thin film pressure sensor is a kind of Piezoresistive pressure sensors, difference exist that the thin-film sensor consists of a resistor pattern that is vaporized or sputter-deposited onto the force-summing element (the measuring diaphragm). In some transducers the resistors are not directly mounted on the diaphragm but are on a beam linked to the diaphragm by a push rod.