EST3123 Centrifuges Pressure Transducers
EST3123 line is widely used in large water-cooler centrifuges or chillers, single-spiral water-cooled chiller or hot water units. Featuring strong anti-jamming capability, high reliability and adaptability, the product has been successfully used in 10000Vac water-cooled centrifugal chillers.
Features
- Pressure type: Gauge/Absolute Pressure
- Range: 0~5bar…50bar
- Accuracy: ±0.5%F.S，±1.0%F.S
- Customized working temperature: -35℃~105℃
- Signal output: 0.5~2.5…4.5Vdc
- Power supply: 5Vdc
- Housing material: Brass
- Ingress Protection: IP65
- OEM: Available
| Model | EST3110 | EST3110 B | EST3120 |
|---|---|---|---|
 |  |  |
|
| Data Sheet | Download | Download | Download |
| Range | 0~5bar…50bar | 0~5bar…50bar | 0~5bar…50bar |
| Accuracy | ±1.0% | ±1.0%,±4.0% | ±0.25%,±0.5%,±1.0% |
| Power Supply | 10~30Vdc | 12~30Vdc | 10~30Vdc,5Vdc |
| Output | 4~20mA,0.5~4.5V | 4~20mA,0.5~4.5V | 4~20mA,0.5~4.5V |
| Electrical Connection | Packard | M12X1/ GX12/16-7 | DIN43650, IP65; GX 16-7 |
| Pressure Connection | G1/4, NPT1/4, 7/16-20UNF | G1/4, NPT1/4, 7/16-20UNF | M20 x 1.5, G1/4, G1/2, NPT1/4, 7/16-20UNF |
| Ingression Protection | IP65 | IP45/ IP65 | IP45/ IP68 |
| Model | EST3122 | EST3135 | EST3123 |
|---|---|---|---|
 |  |  |
|
| Data Sheet | Download | Download | Download |
| Range | 0~5bar…50bar | 0~5bar…50bar | 0~5bar…50bar |
| Accuracy | ±0.5% | ±1.0%,±2.0% | ±0.5%,±1.0% |
| Power Supply | 10~30Vdc,5Vdc | 5±0.25Vdc | 5Vdc |
| Output | 4~20mA,0.5~4.5V | 0.5~2.5…4.5Vdc | 0.5~2.5…4.5Vdc |
| Electrical Connection | Packard, DIN43650 | Packard | Packard |
| Pressure Connection | 7/16-20UNF, 9/16-20UNF | Cooper Pipe Connection | 7/16-20UNF, 9/16-20UNF, M20 x 1.5, G1/4 |
| Ingression Protection | IP65 | IP65 | IP65 |
Application
Large water-cooler centrifuges or chiller | Water-cooler single cold | Hot water units
Technology
Piezoresistive based transducers rely on the piezoresistive effect which occurs when the electrical resistance of a material changes in response to applied mechanical strain. In metals, this effect is realized when the change in geometry with applied mechanical strain results in a small increase or decrease in the resistance of the metal. The piezoresistive effect in silicon is due primarily to changes at the atomic level and is approximately two orders of magnitude larger than in metals.
Sputter deposited thin film pressure sensor is a kind of Piezoresistive pressure sensors, difference exist that the thin-film sensor consists of a resistor pattern that is vaporized or sputter-deposited onto the force-summing element (the measuring diaphragm). In some transducers the resistors are not directly mounted on the diaphragm but are on a beam linked to the diaphragm by a push rod.
Accuracy and range for EST 3 series
